MD WASEEM AKRAM

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Office Phone:9760984755

Department of Electrical Engineering

Research Topic

Junctionless Tunnel FET

Education

Currently pursuing Ph.D. (Signal Processing, Communications and Networks) in Department of Electrical
Engg., Indian Institute of Technology Kanpur and secured 8.57 CPI till 3rd semester.
Completed M.Tech (Electronics & Communication Engg.) with 85% in 2011 from Jaypee Institute of
Information Technology Noida.
Completed B.Tech (Electronics & Communication Engg.) with 68% marks in 2008 from Raj Kumar Goel
Institute of Technology Ghaziabad affiliated to Uttar Pradesh Technical University Lucknow.

Bahniman Ghosh and Mohammad Waseem Akram, “Junctionless Tunnel Field Effect Transistor”, IEEE Electron Device Letters, vol. 34, no. 5, May 2013, 584-586. (SCI Imapct Factor: 2.789)
M. W. Akram, Bahniman Ghosh, “Junctionless silicon-nanowire gate-all-around tunnel field effect transistor”, Journal of Low Power Electronics, vol. 10, pp. 286-292, 2014. (Scopus Impact Factor: 0.485)
M. W. Akram, Bahniman Ghosh, “Analog performance of double gate junctionless tunnel field effect transistor”, Journal of Semiconductors, Vol. 35, No. 7, July 2014. (Indexed in Scopus-Elsevier)

Office/Lab

Labs addresses: WL212

Lab Phone: 9760984755

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